It is generally impossible to separately measure the resistance of thefunctional component (i.e., the intrinsic device materials) and the parasiticcomponent (i.e., terminals, interfaces and serial loads) in a two-terminaldevice. Yet such knowledge is important for understanding device physics anddesigning device systems. Here, we consider a case where an electric current,temperature, or magnetic field causes a small but identical relativeconductivity change of the device materials. We find an exact solution to thisrelative change by a simple resistance-data analysis of similarly configuredtwo-terminal devices. The solution is obtainable even if the change is quitesmall, say, less than 0.1%. In special cases of small relative changes inparasitic resistance, the absolute parasitic resistance is also obtainable. Ourmethod is especially useful for studying the switching and transportcharacteristics of the emergent non-volatile resistance memory.
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